Innoevsic Breaks Ground on SiC Module Manufacturing Base in Chongqing Liangjiang New Area

         On November 22, 2024, the groundbreaking ceremony for the Innoevsic Silicon Carbide (SiC) Module Manufacturing Base was held in Chongqing Liangjiang New Area.

         As the third industrial project established by Beijing ESWIN Technology Group in Chongqing, the project marks a further step in ESWIN’s ecosystem expansion in the SiC power semiconductor industry and will contribute new momentum to Chongqing’s “33618” modern manufacturing system.

         At the ceremony, Wang Hui, General Manager of Beijing ESWIN Technology Group and Chairman of Chongqing Innoevsic Technology Co., Ltd., stated that the project will be constructed in three phases. The facility will produce SiC power modules in multiple package formats, including HPD, ED3 and SSDC.The project will adopt a range of advanced technologies, including embedded cooling structure design, low-thermal-resistance aluminum nitride materials, integrated substrates, and laser welding combined with sintering processes. These technologies will enhance device performance while significantly reducing mechanical stress and improving reliability. The resulting products will be widely applied in electric vehicles, Renewables, consumer electronics and aerospace applications.The launch of the Innoevsic SiC module manufacturing base represents an important step in Chongqing’s efforts to strengthen and expand key industrial chains in sectors such as new energy vehicles and electronic information. Once completed, the project will further enhance Chongqing’s competitiveness in power semiconductors and advanced manufacturing, inject.