语言 / Language

TO-263-7

规格

速率

Blocking Voltage(V)

1200 V

封装

Rds(on)(mΩ)

8-1000

DRAM 类型

Tj‌(℃)

-55℃ to 175℃

DRAM 密度

认证

车规级/工业级

探索碳化硅MOSFET产品矩阵

PKG Part Number Blocking Voltage (V) Rds(on) (mΩ)
TO-263-7IM120R008B12008
TO-263-7AM120R012B120012
TO-263-7IM120R017B120017
TO-263-7IM120R022B120022
TO-263-7IM120R026B120026
TO-263-7IM120R030B120030
TO-263-7AM120R034B120034
TO-263-7IM120R040B120040
TO-263-7IM120R045B120045
TO-263-7IM120R053B120053
TO-263-7IM120R060B120060
TO-263-7IM120R078B120078
TO-263-7IM120R090B120090
TO-263-7IM120R116B1200116
TO-263-7IM120R140B1200140
TO-263-7IM120R181B1200181
TO-263-7IM120R220B1200220
TO-263-7IM120R234B1200234
TO-263-7IM120R350B1200350
TO-263-7IM170R450B1700450
TO-263-7IM170R650B1700650
TO-263-7IM170R01KB17001000
TO-263-7A4M120R020B120020
TO-263-7A4M120R030B120030
TO-263-7I4M120R040B120040

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